scia Mill 150 / 200 / 300

scia Mill 150 for full substrate IBE, equipped with single substrate loadlock, SIMS end point detection, and heating jackets for reactive processes
scia Mill 200 for full substrate IBE, in two VCE and two process chamber cluster configuration.
scia Mill 300 for full substrate IBE, in single substrate load lock and single process chamber configuration.

The scia Mill 150, 200, and 300 IBE systems are designed for etching and milling of substrates up to 150, 200, and 300mm diameter, respectively.

These Mill tools can be used for IBE with inert gases. Additionally the systems can be applied for reactive ion beam etching (RIBE) as well as for chemically assisted ion beam etching (CAIBE).

The Mill 150 system is ideal for R&D applications and low volume production.

The Mill 200 and 300 systems can be implemented into a very compact cluster system, equipped with two Vacuum Cassette Elevators (VCE) and SEMS/GEM interface for high volume manufacturing.


Principle:

Inert gas (i.e. Ar)

RIBE

CAIBE


Features and Benefits:

  • Excellent uniformity without shaper
  • Tiltable and rotatable substrate holder
  • Ability to enhance selectivity and rate with reactive gasses
  • Precise process control with SIMS or OES end point detection
  • Helium backside cooling with water
    • Allows for processing with photoresist with adequate wafer cooling
  • Carrier concept enabling variable substrate sizes

Applications:

  • Structuring of magnetic memory (MRAM) and sensors (IR, GMR, TMR)
  • Milling of metals in MEMS production (Au, Pt, Ru, Ta, …)
  • Milling of multilayers from diversified metal and dielectric materials
  • RIBE or CAIBE of compound semiconductors (GaAs, GaN, InP, …)
  • Production of 3D optoelectronic microstructures
  • Ion beam smoothing for reduction of microroughness
  • Pattern transfer for optical gratings
Etching of a spintronic sensor stack, using SIMS spectrometry to determine the layer change boundaries for precise timing of etch angle adjustment and etch end-pointing.
RIBE of surface relief gratings (SRG) as optical couplers for Augmented Reality (AR). IBE at different angles of incidence (left). SEM of etched quartz grating (right).
Etching of 15um of lithium tantalate with photoresist at 15° angle of incidence for a pyroelectric sensor, imaged by SEM courtesy of DIAS Infrared GmbH.

Technical Specifications:

Mill 150Mill 200Mill 300
Substrate sizeup to 150mmup to 200mmup to 300mm
Substrate rotation5-20 rpm5-20 rpm1-20 rpm
Substrate Tilt0° to 165°, in 0.1° steps0° to 170°, in 0.1° steps0° to 170°, in 0.1° steps
Substrate holderWater-cooled, helium backside cooling contactWater-cooled, helium backside cooling contactWater-cooled, helium backside cooling contact
Ion beam source218mm circular microwave ECR source (MW218-e)350mm circular RF source (RF350-e)450mm circular RF source (RF350-e)
NeutralizerTriple plasma bridge neutralizer (N-3DC)RF plasma bridge neutralizer (N-RF)RF plasma bridge neutralizer (N-RF)
Typical removal rateSiO2: 30nm/minSiO2: 20 nm/min (inert), 40-60 nm/min (reactive)
Cu: 60 nm/min
Pt: 35 nm/min
W: 18 nm/min
SiO2: 20 nm/min (inert), 40-60 nm/min (reactive)
Cu: 60 nm/min
Pt: 35 nm/min
W: 18 nm/min
Uniformity variation≤ 2 % (σ/mean)≤ 1 % (σ/mean)≤ 2 % (σ/mean)
Wafer throughputNA12 Wafers/hr (100nm SiO2 removal on 200mm wafer)12 Wafers/hr (100nm SiO2 removal on 200mm wafer)
Base pressure< 5 x 10-7 mbar< 5 x 10-7 mbar< 5 x 10-7 mbar
System dimension
(W x D x H)
1.70 m x 1.70 m x 1.70 m
(without electrical rack)
3.20 m x 2.50 m x 2.50 m
3 process chambers and cassette handler
(without electrical racks and pumps)
2.70 m x 1.50 m x 2.00 m
Single chamber with single substrate load lock
(without electrical racks and pumps)
ConfigurationsSingle chamber
Optional: single substrate load lock
Single chamber
Optional: single substrate load lock or cassette handler
Optional: Cluster system with up to 3 process chambers and cassette handler
Single chamber
Optional: single substrate load lock or cassette handler
Optional: Cluster system with up to 3 process chambers and cassette handler
End point detectionOption: none, OES, or SIMSOptional: none, OES, or SIMSOptional: none, OES, or SIMS
Software interfacesSECS II / GEM, OPCSECS II / GEM, OPCSECS II / GEM, OPC