The scia Cube 300 and 750 are designed for large area high density plasma processes on 300x200mm and 750x750mm substrates, respectively.
The system is capable of plasma-enhanced chemical vapor deposition (PECVD) or reactive ion etching (RIE). For PECVD, it is capable of high deposition rates across a wide range of parameters. For RIE with oxygen or halogen chemistry, it is capable of etching with high anisotropy with the possibility of optimizing selectivity.
Principle:
scia Cube 300
scia Cube 750
Both Cube 300 and 750 systems operate with a plasma created by microwave sources. RF bias is applied to enhance the ion bombardment.
Features and Benefits:
Both Cube 300/ 750:
- Large area processing with an array of synchronized linear microwave sources
- Independent RF bias at substrate holder for energetic substrate bombardment
- In-situ chamber cleaning process
Cube 300 Only:
- Substrate cooling (-10 °C) or heating (850 °C)
Cube 750 Only:
- Substrate face-down orientation for minimized particle load
- Substrate cooling (-10 °C)
- Option: Fully automated vacuum load lock and atmosphere stocker system
Applications:
- PECVD Processes
- Deposition of dielectric films, e.g. encapsulation, barrier coatings, electric insulation (SiO2, Si3N4, …)
- Optical and scratch resistant coatings (a-C:H, DLC)
- Growing of nano-crystalline diamond and carbon nanotubes
- RIE Processes
- Reactive etching and structuring of metals (Ni, Cr, Pt, …)
- Etching of gratings and other structures in optical materials (quartz, fused silica)
- Ashing of photoresist
SEM image of grown synthesized boron doped diamond (BDD) layers processed at very low temperature (390°C) with growth rate of high-quality BDD up to 70 nm/h (courtesy of STU Bratislava).
SEM picture of structured computer generated hologram (CGH) on a quartz sample (courtesy of IMS Stuttgart).
Technical Specifications:
| Cube 300 | Cube 750 | |
|---|---|---|
| Substrate size | 300mm x 200mm | 750mm x 750mm |
| Substrate holder | Water-cooled, RF bias | Water-cooled, RF bias |
| Substrate temperature | Alternatively cryo-cooling down to -10°C or heating up to 850°C | Alternatively cryo-cooling down to -10°C |
| Plasma Source | 2 linear microwave sources (PL400), and/or, RF parallel plate arrangement, 13.56 MHz | 7 linear microwave source (PL1300), and/or, RF parallel plate arrangement, 13.56 MHz |
| Typical deposition rates | Diamond: 30-70 nm/h DLC: 7.5 nm/min | |
| Typical etch rates | Metals: > 5 nm/min SiO2: > 30 nm/min | |
| Power supply | MW max power: 9 kW RF max power: 0.6 kW | MW max power: 48 kW RF max power: 3 kW |
| Base pressure | < 1 x 10-6 mbar | < 1 x 10-6 mbar |
| System dimension (W x D x H) | 1.30m x 1.90m x 1.50m (without electrical rack and pumps) | 3.70m x 2.50m x 2.00m (without electrical rack and pumps) |
| Configurations | Single chamber Optional: single substrate load lock | Single chamber with single substrate load lock Optional: atmospheric loading system with substrate stocking |
| Software interfaces | SECS II / GEM, OPC | SECS II / GEM, OPC |