scia Magna 200

Magna 200, confocal arrangement of magnetrons, in a double VCE, two process chamber configuration (2nd chamber not visible on backside).
Magna 200, single magnetron arrangement, in a double VCE, two process chamber configuration.

The scia Magna 200 is a magnetron sputtering system used for precision wafer coatings of metals and/or dielectric layers. Typical depositions include piezoelectric layers, optical coatings, and passivation layers.

This system is very versatile and can be suitable for a small scale R&D application, or configured into a cluster arrangement for mass production.


Principle:

  • Magna 200 Magnetron arrangements:
    • Single magnetron principle with rotating magnetic field. Mag. dia. > substrate dia. (left video)
    • Confocal magnetron arrangement (up to 4). Mag. dia. < substrate dia., thus, substrate rotation required (right video)
    • DRM 400 from Fraunhofer FEP with two concentric targets. Mag. dia. > substrate dia.
Single magnetron principle with rotating magnetic field
Confocal magnetron arrangement (up to 4 in one process chamber)

Features and Benefits:

  • RF bias for conformity and stress control
  • Excellent uniformity with rotatable substrate holder
  • Helium cooling contact and electrostatic chuck (ESC) maintains low substrate temperatures
  • High deposition rates with reactive sputtering in unipolar and bipolar mode
  • Tunable film properties by adjusting energetic substrate bombardment and other parameters
  • Co-sputtering with confocal arrangement of magnetrons

Applications:

  • Frequency trimming of bulk acoustic wave (BAW) or surface acoustic wave (SAW) filters
  • Thickness trimming of silicon on insulator (SOI), quartz, lithium tantalate (LT) or lithium niobate (LN) wafers
  • Film thickness error or step height correction in thin film head (TFH) manufacturing
  • Dimensional correction in manufacturing of MEMS components
  • Form error correction for X-ray mirrors
Reactive confocal sputter deposition of SiO2 with bipolar pulsed DC on a 150 mm dia. Si wafer. Uniformity < 0.8 % (σ/mean), stress -300 MPa, deposition rate 7 nm/min. RI of 1.48 indicates stoichiometric and dense SiO2 deposition.

Technical Specifications:

SPECIFICATIONDESCRIPTION
Substrate sizeup to 200mm
Substrate holderWater-cooled, helium backside cooling contact
Optional: RF bias
Optional: electrostatic clamping
Optional: substrate heating (up to 750C)
Substrate rotation0-20 rpm.
Sputter sourcesSubstrates ≤ 150 mm
250mm magnetron with rotating magnetic field, or,
125mm confocal magnetrons (up to 4)
Substrates up to 200 mm
300mm magnetron with rotating magnetic field, or,
Double Ring Magnetron (DRM 400) from Fraunhofer FEP
Sputter modesSubstrates ≤ 150 mm
DC in uni- or bipolar pulse mode (up to 10 kW), and/or,
RF (up to 3 kW, 13.56 MHz)
Substrates up to 200 mm
DC in uni- or bipolar pulse mode (up to 2 x 10 kW), and/or,
RF (up to 6 kW, 13.56 MHz)
Typical deposition rateSiO2:
90 nm/min (single)
7 nm/min (confocal)
180 nm/min (DRM 400)
Film Uniformity≤ 1.5 %* (single)
≤ 0.8 %* (confocal)
≤ 0.5 %* (DRM 400) *(σ/mean)
Base pressure< 1 x 10-6 mbar
System dimension (W x D x H)2.70m x 1.10m x 1.60m,
Single chamber with cassette handling
(without electrical rack and pumps)
ConfigurationsSingle chamber with single substrate lock lock or cassette handler
Cluster system with up to 5 process chambers and cassette handler
Software interfacesSECS II / GEM, OPC