Some applications require ultra high wafer or thin film total thickness variation (TTV) or planarization that is unachievable with typical processes such as chemical-mechanical polishing (CMP). In such cases after CMP, the scia Trim 200 and 300 can be used to reach the desired thin film uniformity or wafer planarization. The scia Trim tools have a focused argon ion beam that scans across the wafer surface while varying the dwell time to physically etch material off the surface. This physical etching method works for all wafer materials. The tool and process are optimized for high volume production of wafers to provide significant yield improvement.