- Features
Optimized for the removal of thick photo resist layers like SU-8
- Pure chemical etching by radicals – no attack on surface by ions
- Integrated remote plasma source in water cooled plasma zone
- Very low thermal load for substrates
- Substrate sizes up to 460 mm x 460 mm
- High selectivity to Si ( > 500:1)
- Can also be used for isotropic etching of materials like Si, SiO2, SiN, SiOxNy, W, Mo, etc.
Working Plate with 9 x 6″ Wafers
Applications
- LIGA
- SU-8 Removal
- Photoresist Removal
- Silicon Etching
- Decapsulation
Principle of Operation
Principle of Operation
- Microwave energy generated by magnetron and
transmitted into water-cooled plasma chamber - No measurable microwave radiation at the radical
output. - Microwave energy is completely dissipated within the
plasma zone of the pure alumina chamber. - 3.3 μm/min for SU-8
- 3 μm/min for Si
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